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4V Drive Nch MOSFET RW1E014SN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) WEMT6 Features 1) Low On-resistance, High speed switching. 2) Built-in G-S Protection Diode. 3) Space Saving, Small Surface Mount Package (WEMT6). (6) (5) (4) (1) (2) (3) Applications Switching Abbreviated symbol : PN Packaging specifications Package Type Code Basic ordering unit (pieces) RW1E014SN Taping T2R 8000 Inner circuit (6) (5) (4) 2 1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 30 20 1.4 2.8 0.5 2.8 0.7 150 -55 to +150 Unit V V A A A A W C C Total power dissipation Channel temperature Range of Storage temperature 1 Pw10s, Duty cycle1% 2 When mounted on a ceramic board Thermal resistance Parameter Channel to ambient When mounted on a ceramic board Symbol Rth (ch-a) Limits 179 Unit C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.A RW1E014SN Electrical characteristics (Ta=25C) Parameter Symbol Min. - 30 - 1.0 - - - 1 - - - - - - - - - - Typ. - - - - 170 250 270 - 70 15 12 6 6 13 8 1.4 0.6 0.3 Max. 10 - 1 2.5 240 350 380 - - - - - - - - - - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Data Sheet RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= 20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL 21 RG=10 VDD 15V ID= 1.4A VGS= 5V RL 11 RG=10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 1.4A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.06 - Rev.A RW1E014SN Electrical characteristics curves 1000 Ta=25C f=1MHz VGS=0V 1000 10 Data Sheet tf 100 100 GATE SOURCE VOLTAGE : VGS (V) 10 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25C VDD=15V VGS=10V RG=10 Pulsed Ta=25C 9 VDD=15V ID=1.4A 8 RG=10 Pulsed 7 6 5 4 3 2 1 0 0 1 2 3 Ciss td (off) 10 Coss Crss 10 td (on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) 10 VDS=10V Pulsed 1000 10 VGS=0V Pulsed Ta=25C 900 Pulsed 800 700 600 500 ID=0.7A ID=1.4A 1 0.1 Ta=125C Ta=75C Ta=25C Ta= -25C SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 400 300 200 100 0 0 2 4 6 8 10 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage VGS=10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (m) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (m) 10000 10000 10000 VGS=4V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 1000 1000 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 Ta=25C Pulsed VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.06 - Rev.A RW1E014SN Measurement circuit Pulse Width Data Sheet VGS ID VDS VGS 50% 10% 10% 90% 50% 10% RL D.U.T. RG VDD VDS 90% td(on) ton tr td(off) toff 90% tr Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG (Const.) RG D.U.T. VDD Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. 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If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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